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Proceedings Paper

InAsSb photoluminescence at low temperatures
Author(s): K. Murawski; K. Grodecki; P. Martyniuk
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Paper Abstract

In this work we present photoluminescence measurements of InAs 0.916Sb0.084 bulk material grown in MBE VIGO/MUT laboratory [1–2]. Photoluminescence spectra showed the occurrence of two peaks in temperature range 20K-40K, one of them comes from the band-to-band transition while the another is the result of exciton transition [3].

Paper Details

Date Published: 14 August 2018
PDF: 4 pages
Proc. SPIE 10830, 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 108300T (14 August 2018); doi: 10.1117/12.2503625
Show Author Affiliations
K. Murawski, Military Univ. of Technology (Poland)
K. Grodecki, Military Univ. of Technology (Poland)
P. Martyniuk, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 10830:
13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods
Przemyslaw Struk; Tadeusz Pustelny, Editor(s)

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