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Proceedings Paper

Photoconductive switching for high-power microwave generation
Author(s): Michael D. Pocha; Wayne W. Hofer
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Paper Abstract

Photoconductive switching is a technology that is being increasingly applied to generation of high power microwaves. Two primary semiconductors used for these devices are silicon and gallium arsenide. Diamond is a promising future candidate material. This paper discusses the important material parameters and switching modes critical issues for microwave generation and future directions for this high power photoconductive switching technology.

Paper Details

Date Published: 1 March 1991
PDF: 8 pages
Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); doi: 10.1117/12.25036
Show Author Affiliations
Michael D. Pocha, Lawrence Livermore National Lab. (United States)
Wayne W. Hofer, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 1378:
Optically Activated Switching
Fred J. Zutavern, Editor(s)

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