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Proceedings Paper

Ultra-high efficiency III-V on Si MOS capacitor Mach-Zehnder modulator
Author(s): T. Aihara; T. Hiraki; K. Hasebe; T. Fujii; K. Takeda; T. Tsuchizawa; T. Kakitsuka; H. Fukuda; S. Matsuo
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Paper Abstract

High-capacity optical transmitters with reduced size, cost, and power consumption are required to meet growing bandwidth requirements of network systems. A high-modulation-efficiency Mach-Zehnder modulator (MZM) on an Si platform is a key piece of equipment for these transmitters. Si-MZMs have been widely reported; however their performance is limited by the material properties of Si. To overcome the performance limitations of Si MZMs, we have integrated III-V materials on Si substrate and developed a heterogeneously integrated III-V/Si metal oxide semiconductor (MOS) capacitor phase shifter for constructing ultra-high efficient MZM, in which the n-InGaAsP, p-Si, and SiO2 film are used for constructing the MOS capacitor. The fabricated MZM with the MOS capacitor exhibited a VπL of 0.09 Vcm and insertion loss of ~2 dB. 32-Gbps modulation of the MZM was also demonstrated.

Paper Details

Date Published: 25 October 2018
PDF: 6 pages
Proc. SPIE 10823, Nanophotonics and Micro/Nano Optics IV, 1082309 (25 October 2018); doi: 10.1117/12.2503433
Show Author Affiliations
T. Aihara, NTT Device Technology Labs. (Japan)
T. Hiraki, NTT Device Technology Labs. (Japan)
K. Hasebe, NTT Device Technology Labs. (Japan)
T. Fujii, NTT Device Technology Labs. (Japan)
K. Takeda, NTT Device Technology Labs. (Japan)
T. Tsuchizawa, NTT Device Technology Labs. (Japan)
T. Kakitsuka, NTT Device Technology Labs. (Japan)
H. Fukuda, NTT Device Technology Labs. (Japan)
S. Matsuo, NTT Device Technology Labs. (Japan)


Published in SPIE Proceedings Vol. 10823:
Nanophotonics and Micro/Nano Optics IV
Zhiping Zhou; Kazumi Wada, Editor(s)

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