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Fabrication of Ta based absorber EUV mask with SRAF
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Paper Abstract

With shrinkage of device pattern, optical proximity correction (OPC) will be used for EUV lithography, which leads to need sub resolution assist features (SRAF) on EUV mask. Currently, it is difficult to fabricate EUV mask with SRAF of sub-30nm using conventional resist mask process stably. Moreover, it is necessary to improve line width roughness (LWR) of mask absorber pattern for achieving the lithographic specifications beyond hp15nm patterning. In this paper, in order to meet the requirements of Ta based absorber EUV mask with SRAF, mask fabrication process using new structure blank is studied for sub-30nm SRAF patterning and for improved LWR of primary feature. New mask process using new blank with thinner resist and Cr based hard mask was developed. By using new mask process, resolution of absorber pattern was achieved to 30nm for SRAF patterning, and LWR was improved comparing with conventional process.

Paper Details

Date Published: 12 June 2018
PDF: 6 pages
Proc. SPIE 10807, Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology, 108070F (12 June 2018); doi: 10.1117/12.2503150
Show Author Affiliations
Keiko Morishita, Toshiba Memory Corp. (Japan)
Kosuke Takai, Toshiba Memory Corp. (Japan)
Kenji Masui, Toshiba Memory Corp. (Japan)
Takashi Kamo, Toshiba Memory Corp. (Japan)
Tsukasa Abe, Dai Nippon Printing Co., Ltd. (Japan)
Yasutaka Morikawa, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 10807:
Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology
Kiwamu Takehisa, Editor(s)

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