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Proceedings Paper

New resist and underlayer approaches toward EUV lithography
Author(s): Juha Rantala; Thomas Gädda; Markus Laukkanen; Luong Nguyen Dang; Kimmo Karaste; Dimitrios Kazizis; Yasin Ekinci
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Paper Abstract

Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) is the most promising candidate to pattern the finest features in the next-generation integrated circuit manufacturing. Chemically-amplified resists (CARs) have long been used as state-of-the art photoresists and have been considered as EUV resist. Recently, inorganic and metal-containing resist materials have received significant attention in both academia and industry areas, with the aim to improve the resist performance in terms of resist resolution (R), line-edge roughness (LER), and sensitivity (S) to solve the well-known RLS trade-off. However, the resists reported to date usually have either problem in terms of RLS trade-off or pose metal contamination, which is a serious issue in expensive EUV equipment. Differently, in this report, we demonstrate our recent success in the development of the photochemistry of silicon compounds and resist formulations to obtain novel EUV negative tone resists with high resolution (up to 22nm pitch line/space patterns), low line-edge roughness (1-3nm) with reasonable EUV sensitivity. We also discuss their high etch selectivity to a PiBond’s SOC organic underlayer, which enable a bilayer lithography stack for EUVL patterning. Their excellent etch performances by RIE plasma is also reported.

Paper Details

Date Published: 11 October 2018
PDF: 8 pages
Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 108090X (11 October 2018); doi: 10.1117/12.2503107
Show Author Affiliations
Juha Rantala, PiBond Oy (Finland)
Thomas Gädda, PiBond Oy (Finland)
Markus Laukkanen, PiBond Oy (Finland)
Luong Nguyen Dang, PiBond Oy (Finland)
Kimmo Karaste, PiBond Oy (Finland)
Dimitrios Kazizis, Paul Scherrer Institute (Switzerland)
Yasin Ekinci, Paul Scherrer Institute (Switzerland)


Published in SPIE Proceedings Vol. 10809:
International Conference on Extreme Ultraviolet Lithography 2018
Kurt G. Ronse; Eric Hendrickx; Patrick P. Naulleau; Paolo A. Gargini; Toshiro Itani, Editor(s)

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