Share Email Print
cover

Proceedings Paper • new

Study on impact ionization in charge layer and multiplication layer of InAlAs/InGaAs SAGCM avalanche photodiodes
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Impact ionization in charge layer and multiplication layer of InAlAs/InGaAs avalanche photodiodes (APDs) with separated absorption, grading, charge and multiplication structures has been studied by two-dimensional simulations using Silvaco TCAD. Special attention has been paid to the charge layer and multiplication layer with different thicknesses and doping concentrations in order to optimize the structure for low band discontinuities and an appropriate electric field distribution. Band-edge profile calculations as well as current–voltage characteristic and electric field results of the APDs will be discussed in this article.

Paper Details

Date Published: 5 November 2018
PDF: 7 pages
Proc. SPIE 10814, Optoelectronic Devices and Integration VII, 108141J (5 November 2018); doi: 10.1117/12.2502728
Show Author Affiliations
Jian Chen, Southwest Institute of Technical Physics (China)
Jing Tong, Southwest Institute of Technical Physics (China)
Si-Xun Wang, Military Representative Office of the PLA (China)
Wei-Ying Hu, Southwest Institute of Technical Physics (China)
Qiang Xu, Southwest Institute of Technical Physics (China)
Xiu-Min Xie, Southwest Institute of Technical Physics (China)
Qian Dai, Southwest Institute of Technical Physics (China)
Zhu Shi, Southwest Institute of Technical Physics (China)
Libo Yu, Southwest Institute of Technical Physics (China)
Hai-Zhi Song, Southwest Institute of Technical Physics (China)
Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 10814:
Optoelectronic Devices and Integration VII
Xuping Zhang; Baojun Li; Changyuan Yu; Xinliang Zhang, Editor(s)

© SPIE. Terms of Use
Back to Top