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Proceedings Paper

56 Gbps Si/GeSi integrated EAM
Author(s): L. Mastronardi; M. Banakar; A. Z. Khokhar; N. Hattasan; T. Rutirawut; T. Domínguez Bucio; K. M. Grabska; C. Littlejohns; A. Bazin; G. Mashanovich; F. Y. Gardes
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Paper Abstract

The growing demand for fast, reliable and low power interconnect systems requires the development of efficient and scalable CMOS compatible photonic devices, in particular optical modulators. In this paper, we demonstrate an innovative electro absorption modulator (EAM) developed on an 800 nm SOI platform; the device is integrated in a rib waveguide with dimensions of a 1.5 μm x 40 μm, etched on a selectively grown GeSi cavity. High speed measurements at 1566 nm show an eye diagram with dynamic ER of 5.2 dB at 56 Gbps with a power consumption of 44 fJ/bit.

Paper Details

Date Published: 25 October 2018
PDF: 10 pages
Proc. SPIE 10823, Nanophotonics and Micro/Nano Optics IV, 108230D (25 October 2018); doi: 10.1117/12.2502709
Show Author Affiliations
L. Mastronardi, Univ. of Southampton (United Kingdom)
M. Banakar, Univ. of Southampton (United Kingdom)
A. Z. Khokhar, Univ. of Southampton (United Kingdom)
N. Hattasan, Univ. of Southampton (United Kingdom)
T. Rutirawut, Univ. of Southampton (United Kingdom)
T. Domínguez Bucio, Univ. of Southampton (United Kingdom)
K. M. Grabska, Univ. of Southampton (United Kingdom)
C. Littlejohns, Univ. of Southampton (United Kingdom)
A. Bazin, Univ. of Southampton (United Kingdom)
G. Mashanovich, Univ. of Southampton (United Kingdom)
F. Y. Gardes, Univ. of Southampton (United Kingdom)


Published in SPIE Proceedings Vol. 10823:
Nanophotonics and Micro/Nano Optics IV
Zhiping Zhou; Kazumi Wada, Editor(s)

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