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Proceedings Paper

Study of ferroelectric-superconductor field effect transistor
Author(s): Naijuan Wu; H. Lin; T. Q. Huang; Scott D. Endicter; D. Liu; Alex Ignatiev
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Paper Abstract

A ferroelectric-superconducting three-terminal device consisting of a YBCO base layer and a PbZrxTi1-xO3 (PZT) gate has been developed. This ferroelectric-superconductor field effect transistor has non-volatility and retention behavior based on the memory effect of the ferroelectric gate. The FSuFET was characterized both by an admittance spectroscopy and by DC I-V measurements after polarizing the PZT gate with both positive and negative pulses. The Jc modulation of the YBCO channel by the gate polarization field has been found greater than 90 percent. The retention time longer than 106 seconds has also been obtained.

Paper Details

Date Published: 5 July 1996
PDF: 6 pages
Proc. SPIE 2697, Oxide Superconductor Physics and Nano-Engineering II, (5 July 1996); doi: 10.1117/12.250264
Show Author Affiliations
Naijuan Wu, Univ. of Houston (United States)
H. Lin, Univ. of Houston (United States)
T. Q. Huang, Univ. of Houston (United States)
Scott D. Endicter, Univ. of Houston (United States)
D. Liu, Univ. of Houston (United States)
Alex Ignatiev, Univ. of Houston (United States)


Published in SPIE Proceedings Vol. 2697:
Oxide Superconductor Physics and Nano-Engineering II
Ivan Bozovic; Davor Pavuna, Editor(s)

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