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Proceedings Paper

MOS and MOSFET with transition metal oxides
Author(s): Shelton Fu; Takeshi Egami
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Paper Abstract

MOS and MOSFET structures were constructed with a TiO2 single crystal as a substrate. It was demonstrated that the n-type carriers injected by the applied gate field have a much higher mobility than the chemically doped carriers, by nearly two orders of magnitude. This result suggests that the intrinsic carrier mobility in TiO2 may be substantially higher than usually assumed. Other MOSFET effects including the nonlinear optical effects are discussed.

Paper Details

Date Published: 5 July 1996
PDF: 8 pages
Proc. SPIE 2697, Oxide Superconductor Physics and Nano-Engineering II, (5 July 1996); doi: 10.1117/12.250262
Show Author Affiliations
Shelton Fu, Univ. of Pennsylvania (United States)
Takeshi Egami, Univ. of Pennsylvania (United States)

Published in SPIE Proceedings Vol. 2697:
Oxide Superconductor Physics and Nano-Engineering II
Ivan Bozovic; Davor Pavuna, Editor(s)

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