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E-beam based EUV mask characterization for studying mask induced wafer effects
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Paper Abstract

The mask is a known contributor to intra-field and local patterning fingerprints at the wafer level. Traditionally, a 3σ distribution of critical dimensions (CDs) on mask was sufficient to characterize the contribution to the CD distribution at wafer level. However, as edge placement error (EPE) and EUV wafer patterning stochastics become critical with decreasing feature sizes, wafer CD distributions are being characterized for statistics beyond 3σ. Additionally, Local Placement Error (LPE) is a critical metric that is expected to contribute to EPE. Consequently, it is imperative to understand, characterize and control the EUV mask contributors to the EPE budget. This work is an attempt to extensively characterize the CD and LPE distribution on an EUV mask and identify its impact at wafer level.

Paper Details

Date Published: 18 October 2018
PDF: 8 pages
Proc. SPIE 10810, Photomask Technology 2018, 108100U (18 October 2018); doi: 10.1117/12.2502588
Show Author Affiliations
Vidya Vaenkatesan, ASML Netherlands B.V. (Netherlands)
Qing Tian, Hermes-Microvision Inc., USA (United States)
Emily Gallagher, IMEC (Belgium)
Jim Wiley, ASML US, Inc. (United States)
Jo Finders, ASML Netherlands B.V. (Netherlands)
Michael Kubis, ASML Netherlands B.V. (Netherlands)
Jan Mulkens, ASML Netherlands B.V. (Netherlands)
Chiyan Kuan, Hermes-Microvision Inc., USA (United States)
Kevin Gao, Hermes-Microvision Inc., USA (United States)


Published in SPIE Proceedings Vol. 10810:
Photomask Technology 2018
Emily E. Gallagher; Jed H. Rankin, Editor(s)

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