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Proceedings Paper

Massive CD metrology for EUV failure characterization and EPE metrology
Author(s): Harm Dillen; Yi-Hsin Chang; Fei Wang; Marc Kea; Gijsbert Rispens; Marleen Kooiman; Fuming Wang; Stefan Hunsche; Daniel Tien; Peng Tang; Pengcheng Zhang
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Paper Abstract

Traditionally, the performance of a lithography or patterning step is described by its mean size and the spread at a 3 sigma probability. Recent papers by Bristol, Brunner and others have shown this is insufficient to describe the process capability in EUV lithography. To address this challenge, an enormous increase of sampling CD (critical dimension) values is needed to describe the actual distribution on the wafer. We will show how we can address this by leveraging the HMI eP5 e-Beam system to acquire a set of CDs of previously unknown size. We will further show that extended sampling leads to better understanding of this phenomena, as we can probe full distribution behavior even on a limited number of repeated exposures on a wafer.

Paper Details

Date Published: 3 October 2018
PDF: 10 pages
Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 108090C (3 October 2018); doi: 10.1117/12.2502495
Show Author Affiliations
Harm Dillen, ASML Netherlands B.V. (Netherlands)
Yi-Hsin Chang, Hermes Microvision Inc. (Taiwan)
Fei Wang, Hermes Microvision Inc. (Taiwan)
Marc Kea, Hermes Microvision Inc. (Taiwan)
Gijsbert Rispens, ASML Netherlands B.V. (Netherlands)
Marleen Kooiman, ASML Netherlands B.V. (Netherlands)
Fuming Wang, ASML US, Inc. (United States)
Stefan Hunsche, ASML US, Inc. (United States)
Daniel Tien, Hermes-Microvision Inc. (United States)
Peng Tang, Hermes-Microvision Inc. (United States)
Pengcheng Zhang, Hermes-Microvision Inc. (United States)


Published in SPIE Proceedings Vol. 10809:
International Conference on Extreme Ultraviolet Lithography 2018
Kurt G. Ronse; Eric Hendrickx; Patrick P. Naulleau; Paolo A. Gargini; Toshiro Itani, Editor(s)

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