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Proceedings Paper

Defect formation and carrier doping in epitaxial films of the infinite layer compound
Author(s): Ron Feenstra; Stephen J. Pennycook; M. F. Chisholm; N. D. Browning; J. D. Budai; David P. Norton; E. C. Jones; D. K. Christen; Toshiaki Matsumoto; Tomoji Kawai
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Paper Abstract

The correlation between defect formation and carrier doping in epitaxial films of the infinite layer compound SrCuO2 has been studied via molecular beam epitaxy controlled layer-by-layer growth experiments, chemically resolved scanning transmission electron microscopy,scanning tunneling microscopy, x-ray diffraction, electrical transport measurements, and post-growth oxidation-reduction annealing. Based on the complementary information provided by these experiments, it is concluded that the carrier doping is dominated by the formation of an electro-doped, Sr and O deficient matrix under mildly oxidizing growth conditions. Hole-doping is induced by extended defects containing excess Sr atoms and may lead to superconductivity after high- temperature oxidation.

Paper Details

Date Published: 5 July 1996
PDF: 12 pages
Proc. SPIE 2697, Oxide Superconductor Physics and Nano-Engineering II, (5 July 1996); doi: 10.1117/12.250239
Show Author Affiliations
Ron Feenstra, Oak Ridge National Lab. (United States)
Stephen J. Pennycook, Oak Ridge National Lab. (United States)
M. F. Chisholm, Oak Ridge National Lab. (United States)
N. D. Browning, Oak Ridge National Lab. (United States)
J. D. Budai, Oak Ridge National Lab. (United States)
David P. Norton, Oak Ridge National Lab. (United States)
E. C. Jones, Oak Ridge National Lab. (United States)
D. K. Christen, Oak Ridge National Lab. (United States)
Toshiaki Matsumoto, Osaka Univ. (Japan)
Tomoji Kawai, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 2697:
Oxide Superconductor Physics and Nano-Engineering II
Ivan Bozovic; Davor Pavuna, Editor(s)

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