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Light emission from Si avalanche mode LEDs as a function of E field control, impurity scattering, and carrier density balancing
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Paper Abstract

Light emission in silicon LEDs that operate in the avalanche mode of operation, was analyzed by appropriate modelling, including the silicon energy band structure, available carrier energy spread, and available carrier momentum spread. These mechanisms play key roles in the realization of light emitting, using standard silicon processing procedures. The analyses indicate that appropriate doping and controlling the energized specifically electrons, carrier energy and carrier density by field manipulation, and controlling carrier momentum through appropriate impurity scattering technology, show great potential to enhance these emissions. Particularly, development work conducted on the p+np+ mono-silicon LED and the N+PN+PN+ Poly silicon LED show that field control, impurity and defect scattering and balancing the carrier type and carrier density has a profound influence on the optical emission intensity in Si AMLEDs. Furthermore, a much clearer understanding of the mechanisms responsible for optical emissions in Si Av LEDs has been obtained and can proceed with further improved device designs and applications.

Paper Details

Date Published: 24 January 2019
PDF: 14 pages
Proc. SPIE 11043, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, 1104307 (24 January 2019); doi: 10.1117/12.2502224
Show Author Affiliations
Zhaotong Zhang, Univ. of Electronic Science and Technology of China (China)
Kingsley A. Ogudo, Univ. of Johannesburg (South Africa)
Hongliang Sun, Univ. of Electronic Science and Technology of China (China)
Lukas W. Snyman, Univ. of South Africa (South Africa)
Kaikai Xu, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 11043:
Fifth Conference on Sensors, MEMS, and Electro-Optic Systems
Monuko du Plessis, Editor(s)

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