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Proceedings Paper

Applying MPC for EUV mask fabrication
Author(s): Dai Tsunoda; Yohei Torigoe; Yutaro Sato; Masakazu Hamaji; Gek-Soon Chua; Christian Bürgel
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Paper Abstract

EUV lithography draws increasing attention and its expectation is rising. For instance, replacing a triple patterning with ArF immersion lithography to EUV single patterning may reduce 50% of cost and 25% of cycle time [1]. At the same time, the importance of MPC (Mask Process Correction) is also growing [2] [3] [4]. It has become no longer possible to handle recent small and complex features using a rule-based bias approach. It is known that EUV lithography masks have a different structural stack so that “short range effect” of EB proximity effect is observed in mask writing [5]. In this paper, we investigated the above short range effect through MPC model calibration. Mask data preparation step of EUV mask case is performed and the Turn-a-around (TAT) is compared with conventional DUV mask case.

Paper Details

Date Published: 3 October 2018
PDF: 9 pages
Proc. SPIE 10810, Photomask Technology 2018, 108101H (3 October 2018); doi: 10.1117/12.2502068
Show Author Affiliations
Dai Tsunoda, Nippon Control System Corp. (Japan)
Yohei Torigoe, Nippon Control System Corp. (Japan)
Yutaro Sato, Nippon Control System Corp. (Japan)
Masakazu Hamaji, Nippon Control System Corp. (Japan)
Gek-Soon Chua, GLOBALFOUNDRIES Singapore (Singapore)
Christian Bürgel, Advanced Mask Technology Ctr. GmbH Co. KG (Germany)

Published in SPIE Proceedings Vol. 10810:
Photomask Technology 2018
Emily E. Gallagher; Jed H. Rankin, Editor(s)

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