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Proceedings Paper

A high-brightness accelerator-based EUV source for metrology applications
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Paper Abstract

One of the challenges of actinic metrology tools for EUV lithography is the availability of light sources with high brightness, stability, and availability. In particular, actinic patterned mask inspection on EUV reticles is considered an essential tool for the EUV lithography ecosystem and it requires an EUV source of high brightness. We present the design of a compact and accelerator-based light source producing EUV radiation with high-brightness for actinic metrology applications in the semiconductor industry. Our design is based on the well-established components and design principles. The specifications required for actinic mask inspection is achieved using a short period undulator and 430 MeV electron energy. The concentric design of storage and booster rings enables stable operation with a relatively small footprint. This study shows the commercial viability of a compact and high-brightness EUV source with high stability and reliability and demonstrates its feasibility for actinic metrology applications.

Paper Details

Date Published: 8 October 2018
PDF: 9 pages
Proc. SPIE 10810, Photomask Technology 2018, 108100W (8 October 2018); doi: 10.1117/12.2501930
Show Author Affiliations
Yasin Ekinci, Paul Scherrer Institut (Switzerland)
Terence Garvey, Paul Scherrer Institut (Switzerland)
Andreas Streun, Paul Scherrer Institut (Switzerland)
Albin Wrulich, Paul Scherrer Institut (Switzerland)
Leonid Rivkin, Paul Scherrer Institut (Switzerland)

Published in SPIE Proceedings Vol. 10810:
Photomask Technology 2018
Emily E. Gallagher; Jed H. Rankin, Editor(s)

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