Share Email Print
cover

Proceedings Paper • new

Study of resist hardmask interaction through surface activation layers
Author(s): Anuja De Silva; Luciana Meli; Jing Guo; Jennifer Church; Nelson M. Felix; Dario L. Goldfarb; Bharat Kumar; Rudy J. Wojtecki; Magi Mettry; Alexander Hess
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

At IBM, one of the focus items for EUV patterning development is to enable the fullest extent of scaling to a second EUV node while maintaining single-exposure levels. The challenge for the next node of EUV patterning has been with attaining acceptable defectivity levels that can enable electrical yield at pitches 32nm and below. For single-expose EUV, the primary detractors to sub-32nm pitch yield are typically microbridging and line break defects, which have different root causes but can exist in the same dose range. Since the etch strategies for mitigating one of these defect types will result in exacerbating the other, the burden to improve defectivity cannot be placed solely on the pattern transfer process. Resist scumming, which is the root cause of microbriging, can be modulated through interactions with the resist-hardmask interface. The lack of acid at the substrate interface causes resist scumming, and therefore increasing the acidity at the resist hardmask interface can be expected to mitigate post-litho microbridge defects. As the number of EUV photons are significantly less compared to DUV exposures due to the high energy contained in each photon, an extra acid boost can also help to address the stochastics failures that dominate EUV patterning. This paper will demonstrate the concept of modulating the resist-hardmask interaction through surface activation layers, and show the subsequent effects on patterning process window and microbridging defectivity toward yield at pitches <32nm.

Paper Details

Date Published: 3 October 2018
PDF: 9 pages
Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 1080916 (3 October 2018); doi: 10.1117/12.2501824
Show Author Affiliations
Anuja De Silva, IBM Corp. (United States)
Luciana Meli, IBM Corp. (United States)
Jing Guo, IBM Corp. (United States)
Jennifer Church, IBM Corp. (United States)
Nelson M. Felix, IBM Corp. (United States)
Dario L. Goldfarb, IBM Thomas J. Watson Research Ctr. (United States)
Bharat Kumar, IBM Thomas J. Watson Research Ctr. (United States)
Rudy J. Wojtecki, IBM Almaden Research Ctr. (United States)
Magi Mettry, IBM Almaden Research Ctr. (United States)
Alexander Hess, IBM Almaden Research Ctr. (United States)


Published in SPIE Proceedings Vol. 10809:
International Conference on Extreme Ultraviolet Lithography 2018
Kurt G. Ronse; Eric Hendrickx; Patrick P. Naulleau; Paolo A. Gargini; Toshiro Itani, Editor(s)

© SPIE. Terms of Use
Back to Top