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Proceedings Paper

Design and implementation of the next generation electron beam resists for the production of EUVL photomasks
Author(s): Scott M. Lewis; Guy A. DeRose; Hayden R. Alty; Matthew S. Hunt; Jarvis Li; Alex Werthiem; Trevor Fowler; Sang Kook Lee; Christopher A. Muryn; Grigore A. Timco; Axel Scherer; Stephen G. Yeates; Richard E. P. Winpenny
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Paper Abstract

A new class of resist materials has been developed that is based on a family of heterometallic rings. The work is founded on a Monte Carlo simulation that utilizes a secondary and Auger electron generation model to design resist materials for high resolution electron beam lithography. The resist reduces the scattering of incident electrons to obtain line structures that have a width of 15 nm on a 40 nm pitch. This comes at the expense of lowering the sensitivity of the resist, which results in the need for large exposure doses. Low sensitivity can be dramatically improved by incorporating appropriate functional alkene groups around the metal-organic core, for example by replacing the pivalate component with a methacrylate molecule. This increases the resist sensitivity by a factor of 22.6 and demonstrates strong agreement between the Monte Carlo simulation and the experimental results. After the exposure and development processes, what remains of the resist material is a metal-oxide that is extremely resistant to silicon dry etch conditions; the etch selectivity has been measured to be 61:1.

Paper Details

Date Published: 3 October 2018
PDF: 11 pages
Proc. SPIE 10810, Photomask Technology 2018, 108100N (3 October 2018); doi: 10.1117/12.2501808
Show Author Affiliations
Scott M. Lewis, The Univ. of Manchester (United Kingdom)
The Kavli Nanoscience Institute, Caltech (United States)
Guy A. DeRose, The Kavli Nanoscience Institute, Caltech (United States)
Hayden R. Alty, The Univ. of Manchester (United Kingdom)
Matthew S. Hunt, The Kavli Nanoscience Institute, Caltech (United States)
Jarvis Li, The Kavli Nanoscience Institute, Caltech (United States)
Alex Werthiem, The Kavli Nanoscience Institute, Caltech (United States)
Trevor Fowler, The Kavli Nanoscience Institute, Caltech (United States)
Sang Kook Lee, The Kavli Nanoscience Institute, Caltech (United States)
Christopher A. Muryn, The Univ. of Manchester (United Kingdom)
Grigore A. Timco, The Univ. of Manchester (United Kingdom)
Axel Scherer, The Kavli Nanoscience Institute, Caltech (United States)
Stephen G. Yeates, The Univ. of Manchester (United Kingdom)
Richard E. P. Winpenny, The Univ. of Manchester (United Kingdom)


Published in SPIE Proceedings Vol. 10810:
Photomask Technology 2018
Emily E. Gallagher; Jed H. Rankin, Editor(s)

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