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Development of full-size EUV pellicle with thermal emission layer coating
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Paper Abstract

Extreme ultraviolet lithography (EUVL) has received a considerable attention in the semiconductor industry as a promising candidate to achieve the high resolution pattern beyond 10nm. To achieve it, pellicle is essential to prevent the reticle from particle contamination during EUV scanning process. In this study, we present the full-size pellicle for EUVL. Full-size EUV pellicles with SiNx or single-crystalline Si core films were successfully fabricated, and the highest EUV transmittances obtained were 83% and 91%, respectively. Various capping layers were deposited on top of the Si or SiNx core films, and these pellicles were exposed to 355nm UV laser in order to emulate the EUV exposure. Especially, after EUV exposure, Ru emission layer exhibited cooling effect (ΔT) of 600-800 °C with 3nm on SiNx membrane The highest transmittances of full size pellicles with Ru emission layer on SiNx and Si core films obtained were 81% and 88%, respectively.

Paper Details

Date Published: 3 October 2018
PDF: 4 pages
Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 108090R (3 October 2018); doi: 10.1117/12.2501772
Show Author Affiliations
Juhee Hong, S&S TECH Co. (Korea, Republic of)
Chulkyun Park, S&S TECH Co. (Korea, Republic of)
Changhun Lee, S&S TECH Co. (Korea, Republic of)
Keesoo Nam, S&S TECH Co. (Korea, Republic of)
Yongju Jang, Hanyang Univ. (Korea, Republic of)
Seongju Wi, Hanyang Univ. (Korea, Republic of)
Jinho Ahn, Hanyang Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 10809:
International Conference on Extreme Ultraviolet Lithography 2018
Kurt G. Ronse; Eric Hendrickx; Patrick P. Naulleau; Paolo A. Gargini; Toshiro Itani, Editor(s)

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