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Benchmarking of EUV lithography line/space patterning versus immersion lithography multipatterning schemes at equivalent pitch
Author(s): Angélique Raley; Chris Mack; Sophie Thibaut; Eric Liu; Akiteru Ko
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Paper Abstract

In this paper, the authors compare and contrast the line/space patterning performance of direct print EUV to multipatterning schemes at equivalent pitch using a systematic unbiased PSD analysis approach for the 7nm and 5nm logic node critical BEOL layers. The authors highlight where innovation is needed to move forward with EUV in terms of line edge roughness (LER), line width roughness (LWR) performance.

Paper Details

Date Published: 25 November 2018
PDF: 19 pages
Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 1080915 (25 November 2018); doi: 10.1117/12.2501680
Show Author Affiliations
Angélique Raley, TEL Technology Ctr., America, LLC (United States)
Chris Mack, Fractilia, LLC (United States)
Sophie Thibaut, TEL Technology Ctr., America, LLC (United States)
Eric Liu, TEL Technology Ctr., America, LLC (United States)
Akiteru Ko, TEL Technology Ctr., America, LLC (United States)


Published in SPIE Proceedings Vol. 10809:
International Conference on Extreme Ultraviolet Lithography 2018
Kurt G. Ronse; Eric Hendrickx; Patrick P. Naulleau; Paolo A. Gargini; Toshiro Itani, Editor(s)

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