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AC dielectric properties of SiO2 thin layers implanted with In and Sb ions
Author(s): Karolina Czarnacka; Tomasz N. Koltunowicz; Aleksander K. Fedotov
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Paper Abstract

In this paper results of AC measurements of phase angle θ, capacity Cp and loss tangent tgδ dependences on frequency and temperature for InSb-SiO2 nanocomposite, immediately after preparation are presented. The material was obtained by the implantation of In+ and Sb+ ions into a thin layer of SiO2. Based on mathematical and physical calculations, frequency dependence of conductivity σ and relative permittivity εr were determined. Activation energy of electrons was also calculated. This work refers to the hopping mechanism of conductivity.

Paper Details

Date Published: 1 October 2018
PDF: 7 pages
Proc. SPIE 10808, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018, 108085K (1 October 2018); doi: 10.1117/12.2501667
Show Author Affiliations
Karolina Czarnacka, Univ. of Life Sciences in Lublin (Poland)
Lublin Univ. of Technology (Poland)
Tomasz N. Koltunowicz, Lublin Univ. of Technology (Poland)
Aleksander K. Fedotov, Belarusian State Univ. (Belarus)


Published in SPIE Proceedings Vol. 10808:
Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018
Ryszard S. Romaniuk; Maciej Linczuk, Editor(s)

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