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Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices
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Paper Abstract

The light emission from silicon PureB photodiodes was investigated in both forward- and avalanchemode operation and correlated to the presence of process-dependent defects that influence the reverse IV characteristics. As opposed to “defect-free” diodes with low dark currents and abrupt breakdown behavior, the diodes with defects had higher current levels and light-emitting spots appearing at voltages far below the breakdown voltage otherwise set by the implemented doping profiles. The role of such defect-related behavior for the application of the photodiodes as single-photon avalanche diodes (SPADs) and avalanche-mode light-emitting diodes (AMLEDs) is assessed in connection with the recent demonstration of these basic devices as both the light-emitting and light-detecting elements in optocoupler circuits integrated in CMOS for data transmission purposes.

Paper Details

Date Published: 24 January 2019
PDF: 14 pages
Proc. SPIE 11043, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, 1104306 (24 January 2019); doi: 10.1117/12.2501598
Show Author Affiliations
Lis K. Nanver, Univ. of Twente (Netherlands)
Aalborg Univ. (Denmark)
M. Krakers, Univ. of Twente (Netherlands)
T. Knezević, Univ. of Twente (Netherlands)
Univ. of Zagreb (Croatia)
A. Karavidas, Univ. of Twente (Netherlands)
I. Boturchuk, Univ. of Twente (Netherlands)
Aarhus Univ. (Denmark)
V. Agarwal, Univ. of Twente (Netherlands)
R. J. E. Hueting, Univ. of Twente (Netherlands)
S. Dutta, Univ. of Twente (Netherlands)
A. J. Annema, Univ. of Twente (Netherlands)

Published in SPIE Proceedings Vol. 11043:
Fifth Conference on Sensors, MEMS, and Electro-Optic Systems
Monuko du Plessis, Editor(s)

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