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Development of the construction sketch of N-channel MOS-phototransistor with bilateral illumination of channel and operation card of its making
Author(s): Alexander V. Osadchuk; Vladimir S. Osadchuk; Olena M. Zhahlovska; Saule Luganskaya; Andrzej Kociubiński
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Paper Abstract

In the article the physical mechanism of optical radiation co-operation with semiconductor devices, technological route of making of MOS - phototransistor with bilateral illumination of channel has been considered. Also the optical transducer with frequency output based on the structure of the bipolar-field transistors with negative resistance and MOSFET with bilateral illumination of channel that is a photosensitive element has been considered. A mathematical model of the radio measuring optical transducer has been developed.

Paper Details

Date Published: 1 October 2018
PDF: 16 pages
Proc. SPIE 10808, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018, 108080R (1 October 2018); doi: 10.1117/12.2501552
Show Author Affiliations
Alexander V. Osadchuk, Vinnytsia National Technical Univ. (Ukraine)
Vladimir S. Osadchuk, Vinnytsia National Technical Univ. (Ukraine)
Olena M. Zhahlovska, Vinnytsia National Technical Univ. (Ukraine)
Saule Luganskaya, Caspian Univ. (Kazakhstan)
Andrzej Kociubiński, Lublin Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 10808:
Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018
Ryszard S. Romaniuk; Maciej Linczuk, Editor(s)

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