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Optimization of absorber and multilayer in EUV mask for 1D and 2D patterns
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Paper Abstract

The oblique incidence of the illumination system in EUV lithography combined with relative thick absorber layer of EUV mask introduces many unique distortions on the image transfer between mask and wafer, most of these distortions are non-linear thus makes the enhancement of resolution more difficult. This paper focus on analysing the impacts of the absorber layer thickness, multilayer thickness and the light source morphology on the image. And improve the EUV lithography and imaging quality by co-optimization of these three parameters. Besides, the intrinsic features and rules of the impacts of absorber thickness on the imaging properties is revealed. And the different behaviour of 1D dense pattern and isolation pattern during the co-optimization is analysed and elucidated. This study provides a potential new direction for resolution enhancement technology.

Paper Details

Date Published: 3 October 2018
PDF: 11 pages
Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 1080919 (3 October 2018); doi: 10.1117/12.2501463
Show Author Affiliations
Zhizhen Yang, North China Univ. of Technology (China)
Taian Fan, Institute of Microelectronics (China)
Lisong Dong, Institute of Microelectronics (China)
Yayi Wei, Institute of Microelectronics (China)
Univ. of Chinese Academy of Sciences (China)
Yanrong Wang, North China Univ. of Technology (China)
Jing Zhang, North China Univ. of Technology (China)
Jiang Yan, North China Univ. of Technology (China)


Published in SPIE Proceedings Vol. 10809:
International Conference on Extreme Ultraviolet Lithography 2018
Kurt G. Ronse; Eric Hendrickx; Patrick P. Naulleau; Paolo A. Gargini; Toshiro Itani, Editor(s)

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