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2D SRAF rule extraction for fast application based on model-based results
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Paper Abstract

For 1xnm node and beyond, even Extreme Ultraviolet Lithography (EUV) technology, the serious geometries distortions of the wafer patterns at new process are forcing chipmakers and foundries to utilize model-based SRAFs for ensuring the accuracy and manufacturability of the chips. Model-based Sub-Resolution Assistant Feature (SRAF) is based on inverse lithography (ILT), which is accurate but time-consuming. Therefore, it is necessary to extract the SRAF rules from model-based results and apply them to full chip layout. In this paper, we put forward a methodology of 2D SRAF rule extraction based on model-based results. We can describe and locate the SRAFs by introducing Projection Region, because it reflect the relationship between the SRAFs and main patterns. And the new concept Elongation can make the properties of SARFs more clearly. The experimental results show that the proposed method can extract the 2D SRAFs accurately and output the rules in a general format. The rule simplifying step can decrease the quantity of 2D SRAF rules through the identification and process of symmetry.

Paper Details

Date Published: 3 October 2018
PDF: 14 pages
Proc. SPIE 10810, Photomask Technology 2018, 108101E (3 October 2018); doi: 10.1117/12.2501455
Show Author Affiliations
Yaoxuan Dai, North China Univ. of Technology (China)
Xiaojing Su, Institute of Microelectronics (China)
Pengzheng Gao, Institute of Microelectronics (China)
Yayi Wei, Institute of Microelectronics (China)
Univ. of Chinese Academy of Sciences (China)
Yanrong Wang, North China Univ. of Technology (China)
Jing Zhang, North China Univ. of Technology (China)
Jiang Yan, North China Univ. of Technology (China)


Published in SPIE Proceedings Vol. 10810:
Photomask Technology 2018
Emily E. Gallagher; Jed H. Rankin, Editor(s)

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