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Proceedings Paper

Ultrashort pulse laser repair of photomasks for advanced lithography technologies
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Paper Abstract

Deep ultraviolet (DUV) femtosecond laser repair of Cr binary and phase-shift photomasks is routine and well established over decades of practice. As Moore’s law progresses into sub-10 nm nodes, there is a necessary diversification of lithography technologies which can similarly benefit from the high-throughput, non-contact, contaminate-selective capabilities of ultrashort pulsed laser repair. These alternative lithography masks include extreme ultraviolet (EUV) TaN reflective and DUV SiN-based photomasks. Additionally, parametrically systematic studies are shown with intent to find the limits of selective, sub-resolution, removal of simulated soft defects in various patterns on DUV photomasks.

Paper Details

Date Published: 3 October 2018
PDF: 12 pages
Proc. SPIE 10810, Photomask Technology 2018, 1081009 (3 October 2018); doi: 10.1117/12.2501408
Show Author Affiliations
Tod Robinson, RAVE LLC (United States)
Jeff LeClaire, RAVE LLC (United States)


Published in SPIE Proceedings Vol. 10810:
Photomask Technology 2018
Emily E. Gallagher; Jed H. Rankin, Editor(s)

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