Share Email Print
cover

Proceedings Paper

32-channel hybrid III-V/silicon laser arrays with 100GHz wavelength spacing based on LSBG structures on silicon waveguide
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

32-channel hybrid III-V/silicon laser arrays operating at C-band with 100GHz wavelength spacing are designed and simulated. Each channel of the hybrid III-V/silicon laser arrays includes III-V/silicon waveguide gain region with lateral sampled Bragg grating (LSBG) on silicon waveguide for selecting a single longitudinal mode, tapered III-V/silicon waveguide coupling region and silicon waveguide light output region. Light generated by III-V active region evanescently couples to the silicon waveguide, and outputs from the silicon waveguide. The seed grating’s period of LSBG is fixed and varing the sampled grating period of LSBG for selecting wavelength. The transfer matrix method is used to simulate LSBG’s parameters of hybrid III-V/silicon laser arrays. The simulation results show that 32- wavelengths are selected successfully by LSBG when the sampling grating periods are between 4.6 μm and 6.9 μm while the seed grating is fixed at 251 nm. Besides, the tapered III-V/silicon waveguide coupling region is designed and simulated by eigenmode expansion method of commercial software to convert the light spot size and increase the coupling efficiency from III-V to silicon waveguide. By optimizing the parameters, the coupling efficiency is up to 90% while hybrid III-V/silicon tapered waveguide length is fixed at 400μm

Paper Details

Date Published: 6 November 2018
PDF: 6 pages
Proc. SPIE 10812, Semiconductor Lasers and Applications VIII, 108120I (6 November 2018); doi: 10.1117/12.2501167
Show Author Affiliations
Ranzhe Meng, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Hailing Wang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Mingjin Wang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Pijie Ma, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Fengxin Dong, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Wanhua Zheng, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 10812:
Semiconductor Lasers and Applications VIII
Ning Hua Zhu; Werner H. Hofmann, Editor(s)

© SPIE. Terms of Use
Back to Top