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Fabrication and performance of Ge-on-Si PIN photodetectors
Author(s): Pei Guo; Xiuwei Yang; Huabing Xiang; Jianqiang He; Anbo Yuan; Pengfei Xiang; Renfang Lei; Naiman Liao; Ping Xiong; Renhao Li
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Paper Abstract

With the maturity of germanium (Ge) growth on Si, Ge photodetectors have drawn great interests worldwide, which are potentially used in NIR/MIR light detecting, optical telecommunications, single photon detecting, biosensor applications. Lateral and vertical structured Ge-on-Si PIN photodetectors were fabricated and investigated. A dark current density of 20.4 mA/cm2 was obtained, and small size devices resulted in low dark current values. The responsivity as a function of the wavelength was tested, and the highest responsivity of 0.8 A/W at the wavelength of 1310nm was obtained in vertical structured photodetectors, while the lateral structured photodetectors had the best 3dB bandwidth of 0.5 GHz, which was evaluated from the response time of 0.7 ns. The quantum efficiency was ~76%, and the reason of low 3dB bandwidth was discussed.

Paper Details

Date Published: 5 November 2018
PDF: 8 pages
Proc. SPIE 10814, Optoelectronic Devices and Integration VII, 108141C (5 November 2018); doi: 10.1117/12.2501106
Show Author Affiliations
Pei Guo, Chongqing Optoelectronics Research Institute (China)
Xiuwei Yang, Chongqing Optoelectronics Research Institute (China)
Huabing Xiang, Chongqing Optoelectronics Research Institute (China)
Jianqiang He, Chongqing Optoelectronics Research Institute (China)
Anbo Yuan, Chongqing Optoelectronics Research Institute (China)
Pengfei Xiang, Chongqing Optoelectronics Research Institute (China)
Renfang Lei, Chongqing Optoelectronics Research Institute (China)
Naiman Liao, Chongqing Optoelectronics Research Institute (China)
Ping Xiong, Chongqing Optoelectronics Research Institute (China)
Renhao Li, Chongqing Optoelectronics Research Institute (China)


Published in SPIE Proceedings Vol. 10814:
Optoelectronic Devices and Integration VII
Xuping Zhang; Baojun Li; Changyuan Yu; Xinliang Zhang, Editor(s)

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