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Upright dome nanostructure for enhanced light absorption in thin-film silicon solar cells
Author(s): Juan Zhang; Xiaowei Guo; Hengchang Lu; Xizheng Zhang; Shaorong Li
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Paper Abstract

The crystalline silicon (c-Si) solar cells with light-trapping structures can enhance light absorption within the semiconductor absorber layer, especially in thin-film crystalline silicon (c-Si) solar cells. Here we demonstrate that a dome surface light-trapping scheme for c-Si thin films, fabricated via laser interference lithography and chemical wet etching process, significantly enhances the light absorption within the c-Si layer. In this paper, we demonstrate its good antireflection ability and light trapping performance. As a result, an overall reflection down to 5.35% in the spectrum range of 400-1000nm wavelength was achieved, which is 7.8% lower than inverted pyramid without additional nitride coatings. To quantitatively evaluate the light trapping performance of the textures, the enhancement factor in the dome case is 45%, while for the pyramid texture the AE factors is only around 39.7%. In addition, the absorbed photocurrent density is 14.38 mA/cm2 for a 2 μm silicon absorber layer at an incidence angle of 0°, which is 1.32 mA/ cm2 higher than inverted pyramids. The proposed structure has the potential to play a key role in thin film solar cells.

Paper Details

Date Published: 25 October 2018
PDF: 7 pages
Proc. SPIE 10823, Nanophotonics and Micro/Nano Optics IV, 108230Y (25 October 2018); doi: 10.1117/12.2501091
Show Author Affiliations
Juan Zhang, Univ. of Electronic Science and Technology of China (China)
Xiaowei Guo, Univ. of Electronic Science and Technology of China (China)
Hengchang Lu, Univ. of Electronic Science and Technology of China (China)
Xizheng Zhang, Univ. of Electronic Science and Technology of China (China)
Shaorong Li, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 10823:
Nanophotonics and Micro/Nano Optics IV
Zhiping Zhou; Kazumi Wada, Editor(s)

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