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Proceedings Paper

Design of three-dimensional tapered SOI-based spot-size converter for C band
Author(s): Fengxin Dong; Anjin Liu; Pijie Ma; Mingjin Wang; Ranzhe Meng; Aiyi Qi; Wanhua Zheng
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Paper Abstract

A three-dimensional tapered silicon-based spot-size converter is studied to improve the butt-jointed efficiency between the laser diode and the single-mode silicon waveguide. This kind of the spot-size converter can be fabricated while the ridge waveguide is etched. There is no need to regrow SiN or SiON on silicon. The optimized coupling efficiency between the spot-size converter and laser diode is over 0.8 at the wavelength of 1550 nm. This spot-size converter is useful for silicon photonics.

Paper Details

Date Published: 5 November 2018
PDF: 6 pages
Proc. SPIE 10814, Optoelectronic Devices and Integration VII, 108140K (5 November 2018); doi: 10.1117/12.2500973
Show Author Affiliations
Fengxin Dong, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Anjin Liu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Pijie Ma, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Mingjin Wang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Ranzhe Meng, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Aiyi Qi, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Wanhua Zheng, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 10814:
Optoelectronic Devices and Integration VII
Xuping Zhang; Baojun Li; Changyuan Yu; Xinliang Zhang, Editor(s)

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