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Modeling of waveguide AlInAs avalanche photodiodes for high-gain-bandwidth product
Author(s): Yegao Xiao; Zhiqiang Li; Yang Sheng; Zhanming S. Li
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Paper Abstract

Modeling of waveguide AlInAs avalanche photodiodes is reported in this work. Based on beam propagation method analyses, the waveguide design and evanescent coupling are investigated at first. The APD dark- and photo-response and multiplication gain are further simulated based on a drift-diffusion method. The frequency response and bandwidth are also evaluated based on carrier transit analysis formalism. Modeling results of I-V curves, multiplication gain, breakdown voltage, excess noise factor, -3dB bandwidth and gain-bandwidth product are presented with some consistently compared with reported experimental demonstration.

Paper Details

Date Published: 5 November 2018
PDF: 8 pages
Proc. SPIE 10814, Optoelectronic Devices and Integration VII, 108140M (5 November 2018); doi: 10.1117/12.2500929
Show Author Affiliations
Yegao Xiao, Crosslight Software Inc. (Canada)
Zhiqiang Li, Crosslight Software Inc. (Canada)
Yang Sheng, Crosslight Software Inc. (China)
Zhanming S. Li, Crosslight Software Inc. (Canada)


Published in SPIE Proceedings Vol. 10814:
Optoelectronic Devices and Integration VII
Xuping Zhang; Baojun Li; Changyuan Yu; Xinliang Zhang, Editor(s)

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