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Proceedings Paper

Relative intensity noise properties of quantum dot lasers
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Paper Abstract

In this work, we theoretically investigate the relative intensity noise (RIN) properties of quantum dot (QD) lasers through a rate equation model including the Langevin noises and the contribution from the off resonance energy levels. It is shown that the carrier noise significantly enhances the RIN which can be further reduced by properly controlling the energy separation between the first excited and the ground states. In addition, simulations also unveil that the RIN of QD lasers is rather temperature independent which is of prime importance for the development of power efficient light sources. Overall, these results indicate that QD lasers are excellent candidates for the realization of ultra-low noise oscillators hence being advantageous for fiber optics communication networks, short reach optical interconnects and integrated photonics systems.

Paper Details

Date Published: 6 November 2018
PDF: 8 pages
Proc. SPIE 10812, Semiconductor Lasers and Applications VIII, 108120S (6 November 2018); doi: 10.1117/12.2500796
Show Author Affiliations
Jianan Duan, LTCI, Télécom ParisTech, Univ. Paris-Saclay (France)
ShanghaiTech Univ. (China)
Xing-Guang Wang, ShanghaiTech Univ. (China)
Yue-Guang Zhou, ShanghaiTech Univ. (China)
Cheng Wang, ShanghaiTech Univ. (China)
Frédéric Grillot, LTCI, Télécom ParisTech, Univ. Paris-Saclay (France)
The Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 10812:
Semiconductor Lasers and Applications VIII
Ning Hua Zhu; Werner H. Hofmann, Editor(s)

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