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Proceedings Paper

Analysis on the break-down voltage of 4H-SiC avalanche photodiodes
Author(s): Yi Jiang; Jun Chen
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Paper Abstract

The break-down voltage is critical for the reliability and the impact ionization of the 4H-SiC avalanche photodiodes (APDs). In this paper, we report a simulation for 4H-SiC p+-n APDs, study the effect of the doping concentration and thickness of the absorption and multiplication region on break-down voltage and gain. We find that with the doping concentration increasing, the break-down voltage decreases, the gain firstly increases and then decreases. When the thickness increases, the break-down voltage firstly increases and then keeps constant due to the width of the depletion region. By adjusting the break-down voltage, the performance of the 4H-SiC APDs can be optimized.

Paper Details

Date Published: 5 November 2018
PDF: 6 pages
Proc. SPIE 10814, Optoelectronic Devices and Integration VII, 108140Z (5 November 2018); doi: 10.1117/12.2500792
Show Author Affiliations
Yi Jiang, Soochow Univ. (China)
Jun Chen, Soochow Univ. (China)


Published in SPIE Proceedings Vol. 10814:
Optoelectronic Devices and Integration VII
Xuping Zhang; Baojun Li; Changyuan Yu; Xinliang Zhang, Editor(s)

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