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Proceedings Paper

Self-aligned organic thin-film transistors for flexible electronics
Author(s): Thorsten Meyers; Julia Reker; Julian Temme; Fábio F. Vidor; Ulrich Hilleringmann
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Paper Abstract

The digitalization is one of the main driving force for technologic developments in the area of low-cost electronics. Sensors and RFID tags should be integrated possibly at low-cost to easily upgrade everyday objects with new functionalities. Key elements of such upgrading objects are often thin-film transistors (TFTs). In this article we analysed two different commercially available, high-k nanocomposites ino®flex Z3 and ino®flex T3 regarding their frequencydependent dielectric constant and surface properties. TFTs using either ino®flex Z3 or ino®flex T3 as gate dielectric were fabricated using common photolithographic integration methods and subsequently electrically analysed. For further device optimization a self-aligning integration technique was used utilising the nanocomposite ino®flex T3 as gate dielectric. For all integrated TFTs, dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) was used as active semiconductor.

Paper Details

Date Published: 24 January 2019
PDF: 6 pages
Proc. SPIE 11043, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, 1104313 (24 January 2019); doi: 10.1117/12.2500673
Show Author Affiliations
Thorsten Meyers, Paderborn Univ. (Germany)
Julia Reker, Paderborn Univ. (Germany)
Julian Temme, Paderborn Univ. (Germany)
Fábio F. Vidor, Univ. Federal do Rio Grande do Sul (Brazil)
Ulrich Hilleringmann, Paderborn Univ. (Germany)

Published in SPIE Proceedings Vol. 11043:
Fifth Conference on Sensors, MEMS, and Electro-Optic Systems
Monuko du Plessis, Editor(s)

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