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Proceedings Paper

Inorganic p-channel thin-film transistors using CuO nanoparticles
Author(s): Julia Reker; Thorsten Meyers; Fábio F. Vidor; Ulrich Hilleringmann
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Paper Abstract

This study focuses on the integration of copper oxide nanoparticles forming inorganic p-channel thin-film transistors (TFTs). The used CuO nanoparticles have a diameter of 25-55 nm and are dispersed in a water-based solution providing the opportunity of low-cost and large-scale integration processes. First investigations were realized using an inverted coplanar TFT architecture due to the low chemical and physical stresses the semiconductor has to withstand. Therefore, a gate electrode consisting of 50 nm aluminum followed by 7 nm titanium was integrated on a Si/SiO2 substrate. As gate dielectric a high-k organic-inorganic nanocomposite was deposited by spin-coating resulting in a layer thickness of 150- 180 nm. For the drain and source electrodes gold and nickel were examined. For both metallizations the influence of an electrode treatment with a self-assembling monolayer (2,3,4,5,6 Pentafluorothiophenol, PFBT) was investigated. The gate metallization as well as the drain/source electrodes were evaporated via e-beam and structured by photolithography followed by wet-etching processes and lift-off technique, respectively. In the last step, the CuO nanoparticle layer was applied by doctor blade process followed by evaporating the solvent in a convection oven under ambient conditions. The maximum temperature during the integration process was 115°C so that a compatibility to glass and foil substrates is given. The influence of the drain/source material on the electrical characteristics was explored as well as the impact of the electrode treatment. Besides single TFTs inorganic inverter circuits in complementary technique were analyzed.

Paper Details

Date Published: 24 January 2019
PDF: 6 pages
Proc. SPIE 11043, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, 1104312 (24 January 2019); doi: 10.1117/12.2500644
Show Author Affiliations
Julia Reker, Paderborn Univ. (Germany)
Thorsten Meyers, Paderborn Univ. (Germany)
Fábio F. Vidor, Univ. Federal do Rio Grande do Sul (Brazil)
Ulrich Hilleringmann, Paderborn Univ. (Germany)

Published in SPIE Proceedings Vol. 11043:
Fifth Conference on Sensors, MEMS, and Electro-Optic Systems
Monuko du Plessis, Editor(s)

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