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Proceedings Paper

Diode laser wavelength standard based on 13C2H2 near-infrared spectroscopy at NIM
Author(s): Jianbo Wang; Jin Qian; Cong Yin; Chunying Shi; Hanping Wang; Shan Cai
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Paper Abstract

Diode Laser wavelength standards at the 1.5 μm optical telecommunication band have important application in the dense wavelength division multiplexing (DWDM). This need motivates the frequency stabilization by Doppler-free spectra of the molecule overtone, such as acetylene 13C2H2 or 12C2H2, HCN and ammoni 14NH3. Especially, the P(16) line of 13C2H2 in the (ν1+ν3) band was adopted by the International Committee for Weights and Measures (CIPM) for practical realization of the definition of metre, which was given a uncertainty of 10 kHz with a relative uncertainty of 5×10-11. The recommended stabilized laser has elicited widespread interest in the national metrology institutes (NMIs). In this paper, we demonstrate an initially experimental result of the acetylene 13C2H2 stabilized laser using the Doppler-free spectra with one-way pump and probe configuration in the external acetylene cell. This stabilized near infrared laser employs a commercial external cavity tunable diode laser with the classic Littman-Metcalf configuration, and it could be applied in the optical fiber communication as a wavelength reference standard. A home-made 3f detection and servo system is taken to lock the external cavity tunable diode laser (ECDL) at the Doppler-free transition of the 13C2H2 P(16) line with one-way pump and probe configuration. The initial experiment results show that a standard deviation of the frequency fluctuation of 2.7 kHz and a relative stability of 4.2×10-13 at 100 s are obtained, respectively. In the future, we will focus on the optimization of these systems, including disciplining the acousto-optic shift frequency to an atom clock and optimizing the parameters of the closed loop.

Paper Details

Date Published: 6 November 2018
PDF: 7 pages
Proc. SPIE 10812, Semiconductor Lasers and Applications VIII, 108120P (6 November 2018); doi: 10.1117/12.2500580
Show Author Affiliations
Jianbo Wang, National Institute of Metrology (China)
Jin Qian, National Institute of Metrology (China)
Cong Yin, National Institute of Metrology (China)
Chunying Shi, National Institute of Metrology (China)
Hanping Wang, National Institute of Metrology (China)
Shan Cai, National Institute of Metrology (China)

Published in SPIE Proceedings Vol. 10812:
Semiconductor Lasers and Applications VIII
Ning Hua Zhu; Werner H. Hofmann, Editor(s)

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