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Proceedings Paper

Sidelobe suppression of laser diode arrays by on-chip phase and amplitude manipulation
Author(s): Xuyan Zhou; Hongwei Qu; Aiyi Qi; Zhonghao Chen; Xiaoxu Xing; Xueyou Wang; Yufei Wang; Wanhua Zheng
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Paper Abstract

The semiconductor laser diode has the advantage of low cost, high efficiency, and compactness, but the beam divergence is too large to directly use. The phase-locked laser array is an efficient way to control the lateral lasing mode, which can help to achieve narrow farfield.. Though the lasing mode of phase-locked laser array can be an in-phase mode via Ywaveguide, integrated with phase shifter and external cavity, it still has a large side lobe in the farfiled. We demonstrated an on-chip phase and amplitude manipulation method to suppress the side-lobe in the farfield. The intensity of the sidelobes decrease from 0.307 to 0.109 and the integral energy of the main lobe increase from 52.5% to 60.5%

Paper Details

Date Published: 5 November 2018
PDF: 6 pages
Proc. SPIE 10811, High-Power Lasers and Applications IX, 108110J (5 November 2018); doi: 10.1117/12.2500531
Show Author Affiliations
Xuyan Zhou, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Hongwei Qu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Aiyi Qi, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Zhonghao Chen, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Xiaoxu Xing, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Xueyou Wang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Yufei Wang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Wanhua Zheng, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 10811:
High-Power Lasers and Applications IX
Ruxin Li; Upendra N. Singh, Editor(s)

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