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Proceedings Paper

Surface passivation of 1550nm AlxInyAsSb avalanche photodiode
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Paper Abstract

We report three kinds of surface passivation for AlxInyAsSb APD, which are SiO2, SiO2 after sulfuration and SU8 2005 treatments. A good sidewall profile of mesas were etch by Inductively Coupled Plasma (ICP) to 2.6μm depth. The order of dark current for device with SU8 passivation is less than -12 under the temperature of 100K. Dark current and photocurrent increase linearly with diameter of mesa. Also, the devices with different passivation methods produce photocurrent excited by incident power. The measurements are consistent with CV modeling and electric field simulations.

Paper Details

Date Published: 5 November 2018
PDF: 9 pages
Proc. SPIE 10814, Optoelectronic Devices and Integration VII, 1081416 (5 November 2018); doi: 10.1117/12.2500523
Show Author Affiliations
Chunyan Guo, Xi'an Institute of Optics and Precision Mechanics (China)
Xi'an Jiaotong Univ. (China)
Univ. of Chinese Academy of Science (China)
Yuexi Lv, Institute of Semiconductors (China)
Univ. of Chinese Academy of Science (China)
Da’nong Zheng, Institute of Semiconductors (China)
Univ. of Chinese Academy of Science (China)
Yaoyao Sun, Institute of Semiconductors (China)
Univ. of Chinese Academy of Science (China)
Zhi Jiang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Science (China)
Dongwei Jiang, Institute of Semiconductors (China)
Univ. of Chinese Acadmey of Science (China)
Guowei Wang, Institute of Semiconductors (China)
Univ. of Chinese Acadmey of Science (China)
Yingqiang Xu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Science (China)
Tao Wang, Xi'an Institute of Optics and Precision Mechanics (China)
Jinshou Tian, Xi'an Institute of Optics and Precision Mechanics (China)
Zhaoxin Wu, Xi'an Jiaotong Univ. (China)
Zhichuan Niu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Science (China)


Published in SPIE Proceedings Vol. 10814:
Optoelectronic Devices and Integration VII
Xuping Zhang; Baojun Li; Changyuan Yu; Xinliang Zhang, Editor(s)

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