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Improved organic thin-film transistor performance by dielectric layer patterning
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Paper Abstract

The Internet of Things (IoT) is a main driving force for research efforts in the area of low-cost electronics. Low-cost solutions for the upgrade of already existing everyday objects by sensors or RFID tags are needed. Key elements of such upgrading technologies are often thin-film transistors (TFTs). In this article we analysed the structurability of the commercially available, high-k dielectric ino® flex T3 by means of common used optical photolithographic techniques and wet-etching processes and its influence on the TFT performance. Furthermore, the impact of an alkanethiol treatment of the drain and source contacts on the charge carrier injection from the metal into the semiconducting layer was investigated. As active semiconductor a dithienothiophene (DTT) derivate was used.

Paper Details

Date Published: 24 January 2019
PDF: 6 pages
Proc. SPIE 11043, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, 1104314 (24 January 2019); doi: 10.1117/12.2500286
Show Author Affiliations
Thorsten Meyers, Paderborn Univ. (Germany)
Julia Reker, Paderborn Univ. (Germany)
Julian Temme, Paderborn Univ. (Germany)
Fábio F. Vidor, Univ. Federal do Rio Grande do Sul (Brazil)
Joachim Vollbrecht, Univ. of California, Santa Barbara (United States)
Heinz Kitzerow, Paderborn Univ. (Germany)
Jan Paradies, Paderborn Univ. (Germany)
Ulrich Hilleringmann, Paderborn Univ. (Germany)


Published in SPIE Proceedings Vol. 11043:
Fifth Conference on Sensors, MEMS, and Electro-Optic Systems
Monuko du Plessis, Editor(s)

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