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Nanoparticles and organic semiconductors for flexible electronics
Author(s): Ulrich Hilleringmann; Julia Reker; Thorsten Meyers; Fábio F. Vidor; Petroné Bezuidenhout; T.-H. Joubert
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Paper Abstract

Key issues for flexible electronics are low temperature processing, cost-efficient semiconducting and dielectric materials, and sufficient performance of the integrated TFT devices. To achieve high performance flexible circuits, contact resistances of today’s transistors must be reduced. Additionally, the parasitic overlap capacitances between the transistor’s electrodes need to be minimized. The inverted staggered transistor setup with self-aligned gate fulfills these requests. Nevertheless, the integrated devices suffer on poor AC characteristics due to limited performance of the common gate dielectric layers. The gate voltage has no direct access to the semiconductor surface, either due to rechargeable surface states and polarization effects or because of low-k values. Consequently, new flexible high-k dielectrics must be implemented in TFT device integration.

Paper Details

Date Published: 24 January 2019
PDF: 6 pages
Proc. SPIE 11043, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, 1104303 (24 January 2019); doi: 10.1117/12.2500218
Show Author Affiliations
Ulrich Hilleringmann, Paderborn Univ. (Germany)
Julia Reker, Paderborn Univ. (Germany)
Thorsten Meyers, Paderborn Univ. (Germany)
Fábio F. Vidor, Univ. Federal do Rio Grande do Sul (Brazil)
Petroné Bezuidenhout, Univ. of Pretoria (South Africa)
T.-H. Joubert, Univ. of Pretoria (South Africa)

Published in SPIE Proceedings Vol. 11043:
Fifth Conference on Sensors, MEMS, and Electro-Optic Systems
Monuko du Plessis, Editor(s)

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