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Proceedings Paper

Radiation effects on GaAs optical system FET devices
Author(s): Alvin S. Kanofsky; Magaly Spector; Ronald L. Remke; Steve B. Witmer
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Paper Abstract

Radiation effects on MESFETs and HFETs used in the fabrication of GaAs integrated circuits of the 1.7 Gb/s system and the 880 Mb/s Metrabus light wave systems are discussed. These devices are used in the driver and preamps of the light wave bus systems. Results on the traps formed from electron radiation as well as gamma radiation results are presented. There was negligible shift in the V sub th values. No new traps were detected. The new structure and fabrication technique are argued to be more radiation resistant than the previously tested ones. Results of annealing experiments performed using MESFETs after they were irradiated are presented.

Paper Details

Date Published: 1 February 1991
PDF: 11 pages
Proc. SPIE 1374, Integrated Optics and Optoelectronics II, (1 February 1991); doi: 10.1117/12.24954
Show Author Affiliations
Alvin S. Kanofsky, Lehigh Univ. (United States)
Magaly Spector, AT&T Bell Labs. (United States)
Ronald L. Remke, AT&T Bell Labs. (United States)
Steve B. Witmer, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1374:
Integrated Optics and Optoelectronics II
Ka Kha Wong, Editor(s)

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