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Proceedings Paper

Short-wavelength optical storage properties of GeSb2Te4 phase-change thin films
Author(s): Liqiu Q. Men; Fusong S. Jiang; Chao Liu; Huiyong Liu; Fuxi Gan
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Paper Abstract

The optical properties of GeSb2Te4 thin films prepared by vacuum RF-sputtering method at the wavelength region of 400 - 830 nm were studied. A comparatively large absorption was observed in the wavelength range 400 - 600 nm, which matches with the wavelengths of Argon laser. The optical storage characterizations of GeSb2Te4 thin film demonstrate clearly that larger reflectivity contrast can be obtained at lower power Argon laser (514.5 nm) irradiation. The erasing contrast is relatively lower but can be improved by multi-layer films match.

Paper Details

Date Published: 3 September 1996
PDF: 6 pages
Proc. SPIE 2931, Fourth International Symposium on Optical Storage (ISOS '96), (3 September 1996); doi: 10.1117/12.248700
Show Author Affiliations
Liqiu Q. Men, Shanghai Institute of Optics and Fine Mechanics (China)
Fusong S. Jiang, Shanghai Institute of Optics and Fine Mechanics (China)
Chao Liu, Shanghai Institute of Optics and Fine Mechanics (China)
Huiyong Liu, Shanghai Institute of Optics and Fine Mechanics (China)
Fuxi Gan, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 2931:
Fourth International Symposium on Optical Storage (ISOS '96)
Fuxi Gan, Editor(s)

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