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Proceedings Paper

Novel low-temperature Er3+ doping of lithium niobate
Author(s): Jarmila Spirkova-Hradilova; Pavla Kolarova; Josef Schroefel; Jiri Ctyroky; Jiri Vacik; Vratislav Perina
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Paper Abstract

Low temperature doping procedure is employed to make erbium doped lithium niobate substrates. The doping process is studied for X-, Y- and Z-cuts in both virgin and proton exchanged wafers. The amount as high as 9 weight percent of erbium was found in X-cuts when the doping was performed from a mixture of molten nitrates containing 10 weight percent of erbium slat after 5 hours diffusion at 400 degrees C. The content of erbium in Z- and Y-cuts as well as in the proton exchanged X-cuts was found to be much lower, below 0.5 percent. In-diffused erbium ions concentration is localized in a very thin layer, which can be extended by a subsequent annealing. Annealed proton exchanged waveguides were fabricated in the erbium doped wafers without any deterioration of the samples surfaces.

Paper Details

Date Published: 19 August 1996
PDF: 12 pages
Proc. SPIE 2775, Specification, Production, and Testing of Optical Components and Systems, (19 August 1996); doi: 10.1117/12.246802
Show Author Affiliations
Jarmila Spirkova-Hradilova, Institute of Chemical Technology (Czech Republic)
Pavla Kolarova, Institute of Chemical Technology (Czech Republic)
Josef Schroefel, Czech Technical Univ. (Czech Republic)
Jiri Ctyroky, Institute of Radio Engineering and Electronics (Czech Republic)
Jiri Vacik, Institute of Nuclear Physics (Czech Republic)
Vratislav Perina, Institute of Nuclear Physics (Czech Republic)


Published in SPIE Proceedings Vol. 2775:
Specification, Production, and Testing of Optical Components and Systems
Anthony E. Gee; Jean-Francois Houee, Editor(s)

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