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Proceedings Paper

Light-scattering-based micrometrology
Author(s): Joerg Bischoff; Jorg W. Baumgart; Joachim J. Bauer; Horst Truckenbrodt
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Paper Abstract

Optical scatterometry, defined as the characterization of surfaces via diffracted light analysis, has been shown to be an attractive tool for the metrology of microlithographic structures. To tackle the inverse scattering problem, advanced data analysis schemes have been developed. This paper illustrates the application of light scattering to characterize developed resist lines in terms of multi- parameter measurements. Additionally, the depth prediction and the width prediction of special silicon concentration profiles, embedded in a plane resist layer, are reported. Substantial accuracy gains have been achieved by using partial least squares (PLS) regression along with quasi- nonlinear data preparation techniques, including range splitting or enhanced quadratic and cubic approaches. Moreover, a combination of PLS and minimum mean square error methods enables rapid and nearly arbitrarily accurate measurements.

Paper Details

Date Published: 19 August 1996
PDF: 12 pages
Proc. SPIE 2775, Specification, Production, and Testing of Optical Components and Systems, (19 August 1996); doi: 10.1117/12.246752
Show Author Affiliations
Joerg Bischoff, Technische Univ. Ilmenau (Germany)
Jorg W. Baumgart, Technische Univ. Ilmenau (Germany)
Joachim J. Bauer, Institut fuer Halbleiterphysik Frankfurt (Germany)
Horst Truckenbrodt, Technische Univ. Ilmenau (Germany)

Published in SPIE Proceedings Vol. 2775:
Specification, Production, and Testing of Optical Components and Systems
Anthony E. Gee; Jean-Francois Houee, Editor(s)

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