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Proceedings Paper

Spectroellipsometric characterization of SIMOX with a very thin Si layer
Author(s): Tomuo Yamaguchi; Ahalapitiya Hewage Jayatissa; S. Tonooka; M. Aoyama; M. Tabe; Y. Kanda
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Paper Abstract

Spectroellipsometric characterization of SIMOX (Si, Separated by IMplanted OXygen) with very thin top Si layer is presented. The measured spectra of (Psi) and (Delta) were analyzed with the model Air/SiO2/top-Si/embedded SiO2/c-Si, and are explained well by the use of the established table values of dielectric constants < (epsilon) > of Si and SiO2 and taking account of the thickness fluctuation in the embedded SiO2 layer with an appropriate thickness distribution function. Model dielectric functions are also applied to < (epsilon) > of the top Si layer to detect the size effect. It was found that the < (epsilon) > of top Si layer with thickness down to 4.3 nm is exactly the same as that of the single crystal silicon.

Paper Details

Date Published: 16 August 1996
PDF: 4 pages
Proc. SPIE 2873, International Symposium on Polarization Analysis and Applications to Device Technology, (16 August 1996); doi: 10.1117/12.246240
Show Author Affiliations
Tomuo Yamaguchi, Shizuoka Univ. (Japan)
Ahalapitiya Hewage Jayatissa, Shizuoka Univ. (Japan)
S. Tonooka, Shizuoka Univ. (Japan)
M. Aoyama, Shizuoka Univ. (Japan)
M. Tabe, Shizuoka Univ. (Japan)
Y. Kanda, Toyo Univ. (Japan)


Published in SPIE Proceedings Vol. 2873:
International Symposium on Polarization Analysis and Applications to Device Technology
Toru Yoshizawa; Hideshi Yokota, Editor(s)

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