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Proceedings Paper

Initial plasma oxidation of silicon studied by real-time ellipsometry
Author(s): Masahiro Kitajima; I. Kamioka; T. Kurashina; Keikichi G. Nakamura
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Paper Abstract

We have studied plasma oxidation of silicon surfaces using real-time ellipsometry. The real time observation shows a strong dependence of the plasma oxidation on the plasma density and dc bias. The results clearly reveal that the direction reaction of both positively and negatively charged species with the silicon surface dominates the plasma oxidation process in the ultra thin oxide film region. The effects of temperature and surface orientation of the substrate are also discussed.

Paper Details

Date Published: 16 August 1996
PDF: 4 pages
Proc. SPIE 2873, International Symposium on Polarization Analysis and Applications to Device Technology, (16 August 1996); doi: 10.1117/12.246232
Show Author Affiliations
Masahiro Kitajima, National Research Institute for Metals (Japan)
I. Kamioka, National Research Institute for Metals and Univ. of Tsukuba (Japan)
T. Kurashina, National Research Institute for Metals and Univ. of Tsukuba (Japan)
Keikichi G. Nakamura, National Research Institute for Metals (Japan)


Published in SPIE Proceedings Vol. 2873:
International Symposium on Polarization Analysis and Applications to Device Technology
Toru Yoshizawa; Hideshi Yokota, Editor(s)

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