Share Email Print

Proceedings Paper

Effect of crystalline orientation on photoelastic constant of Si single crystal
Author(s): Kenji Gomi; Yasushi Niitsu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We developed an optical birefringence measurement equipment by using a photoelastic modulator and a polarized laser. A He-Ne infrared laser is used as a light source to measure the optical birefringence in silicon wafers. We explain the theory and process of the measurement of stress in silicon wafers. The magnitude of principal stress difference and also the direction of the principal stress are obtained simultaneously and quantitatively using our experiment. The optical birefringence of (100), (111) and (110) face silicon stressed specimens were measured. From the experimental results, the photoelastic constant depends on the crystalline orientation. By the stress-strain analysis of silicon single crystal, it was found that the relation between the principal strain difference and the retardation was independent of crystalline orientation.

Paper Details

Date Published: 16 August 1996
PDF: 4 pages
Proc. SPIE 2873, International Symposium on Polarization Analysis and Applications to Device Technology, (16 August 1996); doi: 10.1117/12.246229
Show Author Affiliations
Kenji Gomi, Tokyo Denki Univ. (Japan)
Yasushi Niitsu, Tokyo Denki Univ. (Japan)

Published in SPIE Proceedings Vol. 2873:
International Symposium on Polarization Analysis and Applications to Device Technology
Toru Yoshizawa; Hideshi Yokota, Editor(s)

© SPIE. Terms of Use
Back to Top