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Proceedings Paper

Characterization of modulation-doped n-AlxGa1-xAs/GaAs heterostructure using spectroscopic ellipsometry and photoreflectance
Author(s): Cheong Chee Wong; Maho Mochizuki; Hiroyuki Yaguchi; Tadashi Saitoh; Yi-Ming Xiong
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Paper Abstract

In this research, the structural and electronic properties of a modulation-doped n-AlxGa1-xAs/GaAs heterostructure was nondestructively studied using spectroscopic ellipsometry (SE) and photoreflectance (PR). Se was used to characterize the thickness and Al composition x of the AlxGa1-xAs layer for the given sample. On the other hand, PR was used to determine the surface built-in electric field strength and the bandgap energy of the AlxGa1-xAs layer. The results of our analysis show that SE and PR, being complementary to each other, are useful methods in characterizing the given sample.

Paper Details

Date Published: 16 August 1996
PDF: 4 pages
Proc. SPIE 2873, International Symposium on Polarization Analysis and Applications to Device Technology, (16 August 1996); doi: 10.1117/12.246226
Show Author Affiliations
Cheong Chee Wong, Tokyo Univ. of Agriculture and Technology (Japan)
Maho Mochizuki, Tokyo Univ. of Agriculture and Technology (Japan)
Hiroyuki Yaguchi, Univ. of Tokyo (Japan)
Tadashi Saitoh, Tokyo Univ. of Agriculture and Technology (Japan)
Yi-Ming Xiong, Tokyo Univ. of Agriculture and Technology (Japan)


Published in SPIE Proceedings Vol. 2873:
International Symposium on Polarization Analysis and Applications to Device Technology
Toru Yoshizawa; Hideshi Yokota, Editor(s)

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