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Proceedings Paper

Comparative analysis of external factors' influences on the GaP light-emitting p-n-junctions
Author(s): Igor V. Rizikov; George S. Svechnikov; Sergey V. Bulyarsky; Alexander S. Ambrozevich
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Paper Abstract

Radiationinduced modification of characteristics and parameters of the GaP junctions emitting in reds green and yellowgreen spectral regiosi are st udied. A dissociation of the ZnO complexes in redemitting juntons under neutron radiation was shown for the first time. Deep level spectrum Df the gree1i and yellowgreenemitting junctions was investigated. Ionization ene rgies and capture crosssection of six donors and two acceptors centers were determine.

Paper Details

Date Published: 1 February 1991
PDF: 10 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24574
Show Author Affiliations
Igor V. Rizikov, Instrument Making Institute (Ukraine)
George S. Svechnikov, Institute for Nuclear Research (Russia)
Sergey V. Bulyarsky, Polytechnical Institute (Ukraine)
Alexander S. Ambrozevich, Polytechnical Institute (Ukraine)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications
Manijeh Razeghi, Editor(s)

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