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Proceedings Paper

Temperature instability in silicon-based microheating device
Author(s): Jin-Shown Shie; Jiunn-Long Lian
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Paper Abstract

The floating silicon thin-film bridge used as a micro-heating infrared source has been analyzed and simulated for its Joule-thermal effect. It has been found that there exists an effect of temperature instability, when the current passing through the bridge is reaching a critical value. This phenomenon is attributed to the opposite behaviors of the heat conduction and the electrical resistance with respect to the temperature, and their mutual constraints in the heat flow equation. The critical heating process is also associated with a nonlinear time-delay behavior. The delay effect is reduced if the current is over the critical value. The unstable temperature is upper limited by the starting of the silicon intrinsic behavior and decreased with low impurity doping. In practical operations, the controllability of the device thus becomes difficult above this critical temperature.

Paper Details

Date Published: 1 February 1991
PDF: 9 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24573
Show Author Affiliations
Jin-Shown Shie, National Chiao Tung University (Taiwan)
Jiunn-Long Lian, National Chiao Tung University (Taiwan)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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