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Proceedings Paper

Influence of the p-type doping of the InP cladding layer on the threshold current density in 1.5 um QW lasers
Author(s): Bernard Sermage; M. Blez; Christophe Kazmierski; Abdallah Ougazzaden; Andrei Mircea; Jean-Claude Bouley
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Paper Abstract

The influence of the doping level of the InP p type cladding layer on the differentialexternal efficiency 1Dand on the threshold current density th of 1 . 5 jtm InGaAs-InGaAsP-InP quantum well (QW) lasers has been investigated experimentally and theoretically. The experimental results agree at with our model which takes into account the recombinations and the light absorption in all the layers. This allows to predict the optimum values for the optical cavity thickness and for the number of wells to lower the threshold current.

Paper Details

Date Published: 1 February 1991
PDF: 6 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24568
Show Author Affiliations
Bernard Sermage, CNET (France)
M. Blez, CNET (France)
Christophe Kazmierski, CNET (France)
Abdallah Ougazzaden, CNET (France)
Andrei Mircea, CNET (France)
Jean-Claude Bouley, CNET (France)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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